Serially accessed semiconductor memory with tapped shift register

ABSTRACT

A semiconductor memory comprises four arrays (10), (12), (14) and (16) disposed on a single semiconductor chip. Each of the arrays has a serial shift register (86) associated therewith. Data is transferred from the bit lines of the associated array through a transfer gate (90) for storage in the shift register (86). A tap latch (88) is provided on the output of each of the shift bits in the shift register (86) for determining the output therefrom. The tap latch (88) stores a tap decode signal which is decoded from a tap address by the column decoder (30). The column decoder (30) also decodes the column address in the random mode. The tap decode signal selects any of the shift bits in the shift register (86).

TECHNICAL FIELD OF THE INVENTION

The present invention pertains in general to semiconductor memories and,more particularly, to serial access semiconductor memories with shiftregisters output that are generally utilized as video RAMS.

CROSS REFERENCE TO RELATED APPLICATION

This application is related to patent application Ser. No. 693,498,patent application Ser. No. 693,421, and patent application Ser. No.693,422.

BACKGROUND OF THE INVENTION

In video systems, the information displayed is segmented into discreteelements referred to as "pixels", the number of pixels per unit areadetermining the available resolution. Each of these pixels for a simpleblack and white system can be defined in terms of one bit of data;whereas, a more complex system utilizing pixels having differing colorsand intensity levels requires significantly more bits of data. Todisplay the pixel information stored in memory, data is read from memoryand then organized in an interim storage medium in a serial format. Aseach horizontal line in the display is scanned, the pixel data isserially output and converted to video information. For example, thestored data for each black and white pixel correspond to a predeterminedposition in the scan line and determines the video output for either a"white" level or a "black" level. The serial formatting of pixel data isdescribed in U.S. Pat. Nos. 4,322,635, issued to Redwine, 4,347,587,issued to Rao and U.S. patent application Ser. No. 567,040 filed on Dec.30, 1983, all assigned to Texas Instruments Incorporated.

In designing a video memory, two of the primary constraints facing thedesigner are the number of pixels required per scan line and thescanning rate. This determines how the pixel information is mapped intothe memory and the rate at which the stored pixel information must beaccessed and serially output. Typically, video memories are "pixelmapped" such that one row of memory elements or portion thereof directlycorresponds to the pixel information of a given scan line or portionthereof. For example, in a black and white system having 256 pixels perscan line, a memory having 256 memory elements per row would beutilized. The information in the row is accessed and stored in a serialshift register for serial output therefrom during a given scan line,thereby requiring only one memory access per scan line. While data isbeing output from the serial shift register to the display, data isbeing accessed from the memory for updating of display data. This datais transferred to the shift register during the retrace period betweenadjacent scan lines. Therefore, the number of rows and columns of memoryelements is determined by the number of pixels per scan line, the numberof bits of information per pixel and the number of scan lines in thedisplay. The operation of the serial shift register is described in moredetail in U.S. Pat. Nos. 4,322,635 and 4,347,587, with a typical bitmapped video memory described in U.S. patent application Ser. No.567,040.

In applications utilizing pixel mapped video memories, a large number ofindividual memories are arranged in arrays such that a single accessoperation outputs a predetermined pixel pattern. This allows a largenumber of pixels and/or bits per pixel to be output during a singleaccess time, thereby reducing the time required to access a given set ofinformation. This array configuration may require the shift registersassociated with individual memories to be either cascaded or arranged inparallel.

To facilitate the use of multiple pixel mapped video memories, it isdesirable to incorporate more than one memory on a single semiconductorchip. To provide a viable device from both an economical and a marketingstandpoint, each of the integrated memories must maintain some degree ofindependent operation relative to the other memories on the same chipand yet share as many control functions as possible. This is necessaryto reduce the number of integrated circuit pins required to interfacebetween the peripheral circuitry and the chip itself and also to reducethe circuit density. When multiple pixel mapped video memories areintegrated onto a single semiconductor chip, it is desirable to haveindependent access to the serial inputs and outputs of each of thememories and also to have independent control of the random Read/Writemodes for the memories. This would require separate serial-in andserial-out interface pins for each memory, in addition to separate pinsfor the Read/Write control functions, resulting in an impracticalmulti-pin package. Additionally, the control circuitry required toprovide the various independent functions would increase the density ofthe chip circuitry.

In view of the above disadvantages with integrated multiple memorysemiconductor chips, it is desirable to provide a multiple memory chiphaving shared control functions utilizing a minimum number of pins tointerface with peripheral circuitry, yet retaining a high degree ofindependent control of each of the memories in a given chip.

SUMMARY OF THE INVENTION

The present invention disclosed and claimed herein comprises asemiconductor memory having an array of memory elements arranged in rowsand columns for storage of data therein. A row decoder is provided forreceiving and decoding a row address and selecting one of the rows ofmemory elements. A column decoder is provided for receiving and decodinga column address and selecting one of the columns of memory elements.The column and row decoders operate in conjunction to select one of thememory elements in the array in the random access mode. A serial shiftregister is provided having a plurality of shift bits equal in number tothe columns of the array with transfer gates disposed therebetween. Thetransfer gates are operable to transfer data from all of the memoryelements in the accessed row for storage in the shift bits of the shiftregister. A tap circuit is provided for selecting the shift bit fromwhich data is to be output. The tap position is determined by an addressinput to the column decoder and decoded thereby. Data is then shiftedout of the shift register from the tap point, the tap point being theoutput of any of the shift bits as determined by the tap address inputto the column decoder. A control circuit controls whether the outputsignal from the column decoder decodes a column address or provides atap decode signal for selecting the output of the shift register.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and theadvantages thereof, reference is now made to the following descriptiontaken in conjunction with the accompanying Drawings in which:

FIG. 1 illustrates a schematic block diagram of a semiconductor chipincorporating four pixel mapped memory arrays in accordance with thepresent invention;

FIG. 2 illustrates timing diagrams for writing data to select ones ofthe memory cells in accordance with the Write Mask feature;

FIG. 3 illustrates a block diagram of a symmetrical pixel memory array;

FIG. 4 illustrates a portion of the display map for the array of FIG. 3;

FIG. 5 illustrates a schematic block diagram of the shift register andtap latch;

FIGS. 6a and 6b illustrate a diagram of one scan line for threedifferent display scans utilizing soft panning;

FIGS. 7a and 7b illustrate a diagram of one scan line for threedifferent display scans with the shift register tapped at varyingpositions;

FIG. 8 illustrates a schematic diagram of one shift bit of the shiftregister;

FIG. 9 illustrates a schematic diagram of three serially connected shiftbits;

FIG. 10 illustrates a schematic diagram of a portion of the serial shiftregister and the tap latch;

FIG. 11 illustrates a schematic block diagram of the interface betweenthe tap latch, shift register and column decode circuits;

FIG. 12 illustrates a schematic block diagram of the preferred layout ofthe memory elements in the four pixel mapped memory arrays and theassociated shift registers and tap latches;

FIG. 13 illustrates a timing diagram for transferring data from memoryto the shift register;

FIG. 14 illustrates a timing diagram for shifting data from the shiftregister to memory;

FIG. 15 illustrates a schematic block diagram of the circuitry forindividually addressing individual ones of the four arrays on thesemiconductor chip;

FIG. 16 illustrates timing diagrams for individually addressing thememories with separate column address strobes;

FIG. 17 illustrates a schematic diagram of the circuit for midline load;and

FIG. 18 illustrates a timing diagram for midline load.

DETAILED DESCRIPTION OF THE INVENTION

By Four Memory Array

Referring now to FIG. 1, there is illustrated a semiconductor memorycomprised of four memory arrays 10, 12, 14 and 16 referred tohereinafter as a "By Four Memory Array." Each of the memory arrays 10-16is comprised of a read/write memory organized with both serial accessand random access, both of which may use a cell array of the DynamicRandom Access type. All of the arrays 10-16 are included on onesemiconductor chip which is usually mounted in a standard dual-in-linepackage. Memories of this type are generally described in U.S. Pat. No.4,081,701, issued to White, et al. and assigned to Texas InstrumentsIncorporated. Each of the arrays is generally split into two halves withan equal number of memory cells in each half to define distinct rows andcolumns of memory elements. A row of sense amplifiers, each associatedwith one column, is disposed between the two halves such that activationof one row provides an output on each of the sense amplifiers.Appropriate decoding circuits are then utilized to output all or selectones of the address data bits, as will be described hereinbelow.

Each of the memory arrays 10-16 is arranged in a "bit mapped"configuration; that is, the relative location of a bit of data stored inthe memory corresponds to a physical location of a pixel on display. Forexample, the data stored in the first row and first column of one of thebit mapped arrays could correspond to the first pixel in the first scanline on the video display. If only one array were utilized, the adjacentpixel would correspond to the data stored in the first row and secondcolumn of the array. However, if multiple arrays are utilized, adjacentcolumns in a given array correspond to every nth pixel in the displaywhere n is equal to the number of arrays in parallel. This type ofmemory is fully described in U.S. patent application Ser. No. 567,040,filed Dec. 30, 1983 and assigned to Texas Instruments Incorporated,"Inside Graphic Systems, From Top To Bottom", Electronic Design, Volume31, No. 15 (1983), by Novak and Pinkham, "Dedicated Processor ShrinksGraphic Systems To Three Chips", Electronic Design, Volume 31, No. 16(1983), by Williamson and Rickert and "Video Ram Excells At FastGraphics", Electronic Design, Volume 31, No. 17 (1983), by Pinkham,Novak & Guttag.

The memory arrays 10-16 are all contained on a single semiconductor chipdenoted by a dotted line. An address A0-A7 is received in an addressbuffer 18, the output of which is input to a row address latch 20 and acolumn address latch 22. The row address latch 20 is controlled by therow address strobe signal RAS and the column address latch 22 iscontrolled by the column address strobe CAS. The row address latch 20 isoutput to a row address bus 24 and the output of the column addresslatch 22 is output to a column address bus 26. Each of the memory arrays10-16 has associated therewith a row decoder 28 for receiving thelatched row address from a row address bus 24 and a column decoder 30for receiving the latch column address from the column address bus 26.Although the row and column decoders are shown separate, each of thearrays 10-16 shares a common row decoder and a common column decoder, aswill be described hereinbelow.

Each of the memory arrays 10-16 has a data input/output (I/O) circuit 32associated therewith which is comprised of I/O data lines. The I/O datalines associated with the array 10 are denoted by "I/O_(O) ", the I/Olines associated with the array 12 are denoted by "I/O₁ ", the I/O linesassociated with the array 14 are denoted by "I/O₂ " and the I/O linesassociated with the array 16 are denoted by "I/O₃." In addition, aserial shift register 34 is associated with the array 10, a serial shiftregister 36 is associated with the array 12, a serial shift register 38is associated with the array 14 and a serial shift register 40 isassociated with the array 16.

Each of the shift registers 34-40 has associated therewith tap latches42, 44, 46 and 48, respectively. The tap latches 42-48 are operable toselect the shift bit of the associated shift registers 34-40,respectively for output therefrom. The tap latches 42-48 are interfacedwith a tap latch bus 50 which is connected to the output of a tap latchdecode circuit 52. The tap latch decode circuit 52 receives the latchedcolumn address from the address bus 26 for decoding thereof. In thepreferred embodiment, the tap latch decode circuit 52 and the columndecoder 30 are shared functions such that only one decode circuit isrequired. Control circuitry is provided for determining whether thedecoded output is placed onto the tap latch bus 50 or the column decodebus 26, as will be described hereinbelow.

Each of the shift registers 34-40 is comprised of a plurality ofserially arranged shift bits, each shift bit therein associated with aseparate column in the associated array. A transfer gate 54 is providedfor interfacing between the individual columns of each of the arrays10-16 and the associated shift registers 34-40. This transfer of datacan either be from the output of each of the sense amps in therespective memory arrays for loading into the shift bits of therespective shift registers or it can allow transfer of data from theshift register to the associated array. The transfer gates 54 allow fortransfer of all of the data in the addressed row to the shift registerfor serial output therefrom, as will be described hereinbelow. Theoperation of the transfer gates and the serial shift register isdescribed in detail in U.S. Pat. No. 4,330,852.

The output of the tap latch 42 comprises the serial output of the shiftregister 34, and this output is input to one input of a Single PoleDouble Throw switch 56, which allows for the output of tap latch 42 toswitch between the serial input of the shift register 34 and the serialinput of the shift register 36. In a similar manner, the output of thetap latch 46, which is the selected output of the shift register 38, isalso input to a Single Pole Double Throw switch 58, which selectsbetween the serial input of the shift register 38 and the serial inputof the shift register 40 associated with the array 16. The tap latch 44,which selects the output of the shift register 36, is fed back around tothe serial input of the shift register 36 through a Single Pole SingleThrow switch 60, and the output of the tap latch 48 is also fed back tothe serial input of the shift register 40 through a Single Pole SingleThrow switch 62. Each of the switches 56-62 is a metal mask programmableoption which is selected during fabrication of the semiconductor memory.Although illustrated as switches, they are in actuality a series oflines which are connected or disconnected on the mask prior tofabrication of the device.

The switches 56-62 allow for two modes of operation. In the first mode,the switches 56 and 58 are connected such that the output of the taplatch 42 is connected back to the serial input of the associated shiftregister 34 and the output of the tap latch 46 is connected back to theserial input of the associated shift register 38. In a similar manner,the switches 60 and 62 are closed such that the outputs of the taplatches 44 and 48 are connected back to the serial inputs of therespective shift registers 36 and 40. In this manner, each of the shiftregisters 34-38 is configured as a "circulating" shift register.

In the second mode of operation, the switch 56 is configured to connectthe tapped output of the shift register 34 to the serial input of theshift register 36 and the switch 58 is configured to connect the tappedoutput of the shift register 38 to the serial input of the shiftregister 40. The switches 60 and 62 are configured in the open positionsuch that circulation of data in the shift registers 36 and 40 isinhibited. This second mode of operation essentially cascades shiftregisters 34 and 36 and shift registers 38 and 40.

To interface with the shift registers in two modes, a signal pin labeled"S₁ " is connected to the output of the tap latch 44, a signal pin "S₀ "is interfaced with the serial input of the shift register 34, a signalpin "S₂ " is interfaced with the serial input of the shift register 38and a signal pin labeled "S₃ " is interfaced with the output of the taplatch 48. In the first mode of operation, the pin S₁ is multiplexed withboth the serial input and output of shift register 36, pin S₀ ismultiplexed with the serial input and output of shift register 34, pinS₂ is multiplexed with the serial input and output of shift register 38and pin S₃ is multiplexed with the serial input and output of shiftregister 40. Buffers are provided such that data can be input or outputto the associated shift registers on pins S₀ -S₃ in response to theserial out enable signal SOE to selectively input data or receive outputdata from the associated shift register. These multiplexed functionswill be described hereinbelow with reference to FIG. 5.

In the second mode of operation, the pin S₁ is connected to the outputof tap latch 44 and the pin S_(O) is connected to the input of the shiftregister 34, the shift registers 34 and 36 being cascaded. Pin S_(O) isconnected to the input of shift register 38 and pin S₃ is connected tothe output of tap latch 48, shift registers 38 and 40 being cascaded. Inthis mode, data can be serially input to shift register 34 and extractedfrom the tapped output of shift register 36. In a similar manner, datacan be serially input to shift register 38 and extracted from the tappedoutput of shift register 40.

The switches 56-62 provide the option of selectively accessing each ofthe shift registers associated with the memory arrays 10-16 on a singlemultiplexed input/output or, alternatively, cascading the associatedshift registers of two of the arrays with a dedicated input and adedicated output for each cascaded pair. In this manner, only four pinson the integrated circuit package are required. Each of theseconfigurations and the applications therefor will be described in moredetail hereinbelow.

Each of the memory arrays 10-16, as described hereinabove, shares acommon row decoder and a common column decoder. A row address and theassociated RAS signal activates the addressed row in each of the arrays10-16 and a column address and the associated CAS signal activates theaddressed column on each of the arrays 10-16. Transfer of data can thenbe effected between the bit lines and either the data I/O circuits 32 orthe shift registers 34-40. By sharing a common column and row decoder, arandom Read or a random Write function would require reading or writingof data to all of the arrays 10-16 simultaneously. To selectively Writedata to one or more of the arrays 10-16 could require separate columndecode circuits and associated peripheral control circuitry. This wouldsignificantly increase the circuit density on a given chip. Inaccordance with the present invention, two methods are utilized forseparately writing to a desired location in a select one of the memoriesof the four arrays 10-16 without disturbing data in the same location inthe unselected one of the arrays. The first method is referred to as a"Write Mask" feature which inhibits writing to unselected arrays and thesecond method is referred to as "Separate CAS" and utilizes separatecolumn address strobes CAS_(O), CAS₁, CAS₂ and CAS₃ to select the arrayto be written to. As will be described hereinbelow, both of thesefeatures are incorporated on the semiconductor chip but only one isactivated during fabrication by altering the metal mask.

To selectively alter data in any of the arrays 10-16 or any combinationthereof, an enable circuit 64 is provided for interfacing between andI/O buffer 66 and the I/O lines I/O₀ -I/O₃. The enable circuit 64 iscontrolled by outputs from an arbiter 68 which determines whether theWrite Mask feature or the Separate CAS feature is utilized. If theenable circuit 64 is controlled to disable any of the I/O outputsassociated with the arrays 10-16, the data on the associated bit linecannot be "written over." Only the enabled I/O lines can have theassociated bit lines activated such that the associated memory elementcan have data written thereto.

In the Write Mask mode, the four data pins D₀ -D₃ are multiplexed suchthat enable signals W₀, W₁, W₂ and W₃ can be multiplexed therewith. Thesignals W₀ -W₃ determine which of the memory arrays 10-16 are to havethe associated I/O ports enabled. The disadvantage to the Write Maskfeature, as will be described in more detail hereinbelow, is that onlyone set of values for the signals W₀ -W₃ can be latched for each RASsignal. Thereafter, only locations in the selected arrays can be writtento. This presents a problem when operating in the page mode.

When the metal mask is altered to select the Separate CAS feature, thearbiter 68 distinguishes between the four CAS signals. In this mode, therow is selected with the RAS signal and then the desired one of the CASsignals CAS₀ -CAS₃ is input thereto. Therefore, the column address andany one of the columns in the arrays 10-16 can be selected for a givenrow access. Only one row access is required to operate in the page modeand the CAS signals can be controlled during a given row access toselect columns from any one of the arrays 10-16 or any combinationthereof.

A clock and control generator 69 is also provided on the chip togenerate the various clock signals and control signals such as thatrequired to activate the transfer gate and the shift registers 34-40.Two of the signals input to the clock and control generator 69 are thesignal for the shift register clock SCLK and the signal for the transferand output enable signals TR/QE.

Referring now to FIG. 2, there is illustrated a timing diagram for theWrite cycle for the memory of FIG. 1 illustrating the Write Maskfeature. In the conventional RAM, the row address is latched in the rowaddress latch 20 as RAS goes low. After a predetermined duration, thecolumn address is placed in the address buffer 18 and CAS goes low tolatch the column address in the column address latch 22. In the Writemode, the Write/Enable signal WE is changed to a low level after the rowaddress is latched. In the Write Mask feature, the WM /WE signal goeslow prior to RAS going low. This allows the arbiter 68 to latch any dataon the data inputs, representing the signals W₀ -W₃. Since the maskeddata is latched only once for each change in RAS, only one set of maskeddata can be latched for each row address. As described above, this is adisadvantage when operating in the page mode, since different arrayscannot be selected during a given row address.

Cascaded Shift Register

Referring now to FIG. 3, there is illustrated an array configured offour memories 70, 72, 74 and 76. Each of the memories 70-76 is similarto the memory of FIG. 1, in that four bit memory arrays are containedtherein. The memories 70-76 are operated in the second mode of operationwith cascaded shift registers. Each pair of cascaded shift registerstherefore has a dedicated pin for the serial input to the cascaded pairand a dedicated pin for the serial output to the cascaded pair,requiring four pins on the integrated circuit package to interface withthe cascaded pairs. For illustrative purposes, the two cascaded pairs inthe memory 70 are cascaded with the two cascaded pairs in the memory 72.The two cascaded pairs in the memory 74 are cascaded with each other andthe two cascaded pairs in the memory 76 are cascaded with each other.Regardless of the configuration, the electrical configuration is thesame, with only the physical layout of the interconnects changing.

A data update circuit 78 is provided that receives a signal from amicroprocessor (not shown) on a bus 80 to generate sixteen separatesignals to control either the Separate CAS function of each of thememory arrays in the memory 70-76 or, alternately, the Write Maskfeature. These outputs are labeled CAS_(a) /W_(a) -CAS_(p) /W_(p). Thesesignals are associated with separate ones of the memory arrays inmemories 70-76 to selectively write in the random mode to those arraysfor updating pixel data, as will be described hereinbelow.

Each of the pixel mapped arrays in the memories 70-76 is labeled with aletter indicating its relative position in the array. One cascaded pairin memory 70 is labeled "D" and "H". This cascaded pair is cascaded witharrays "L" and "P" in the memory 72. The other array pair in memory 70is labeled "C" and "G," which is cascaded with the other array pair inmemory 72 labeled "K" and "O" The cascaded arrays in the memory 74 arelabeled "B", "F", "J" and "N" and the cascaded arrays in memory 76 arelabeled "A", "E", "I" and "M". Therefore, the array of FIG. 3 isconfigured such that arrays A, B, C and D are arranged in parallel, withthe serial outputs thereof connected to four parallel inputs of afour-bit serial shift register 82, the serial output of which isprocessed for input to a display. The remaining cascaded arrays E-H, I-Land M-P are cascaded in a parallel configuration, such that all of theelements in the cascaded arrays A-D are output to the four-bit shiftregister 82, followed by all of the shift register data from the arraysE-H, etc. This is referred to as "symmetrical pixel mapping."

Referring now to FIG. 4, a portion of the video display is illustratedutilizing the symmetrical pixel array of FIG. 3. In accessing one row ofdata in the symmetrical array, a row address is first supplied and thena column address. The data on the bit lines of each column is thentransferred with the transfer gate 54 to the respective shift registersof each of the arrays A-P. Once the data is parallel loaded into therespective shift register, all of the shift registers are clocked by acommon shift clock to synchronously shift the data to the four-bit shiftregister 82. For a 256 bit wide array and a corresponding 256 bit wideshift register, each of the positions is labeled "00" through "255"corresponding to the particular column. The first shift bit output ofeach of the arrays A through P corresponds to the column address 00. Thefirst data loaded into the four-bit shift register 82 is the datainitially stored in column 00 of arrays A-D. After the data is loadedinto the four-bit shift register 82, it is shifted out at a data ratefour times that of the shift clock. Therefore, the first piece of dataoutput from the four-bit shift register 82 is the data in column 00, row00 of array A followed by the data in column 00, row 00 of array B.After data corresponding to column 00 of arrays A, B, C and D is outputfrom the four-bit shift register 82 to form the first scan line, thedata corresponding to row 00, column 01 is then loaded into shiftregister 82 to form the second scan line. This continues until all ofthe data in the shift registers associated with registers A-D is output,which requires 256 shift clocks and 1024 shifts of the four bit shiftregister 82.

In this example, the display is 256 blocks long which, for the firstscan line, is comprised of 1,024 pixels. For the next scan line, thedata from the shift registers initially associated with the arrays E-Hhas been serially loaded into the shift registers associated with thearrays A-D. This data is then serially loaded into the four-bit shiftregister 82. The next scan line associated with all of the data in theshift registers associated with arrays I-L and the fourth scan line iscomprised of the data in the shift registers associated with the arraysM-P. This forms 256 pixel arrays each having the pixels therein labeledA through P. After all of the data associated with row address 00 isoutput from the shift registers, row 01 is accessed and the datatransferred to the associated shift registers and scan lines fivethrough eight are displayed to form the second row of pixel arrays.

By utilizing the symmetrical array of FIG. 3, it is possible to writeover sixteen adjacent pixels in any one of the pixel arrays in onememory access time. If only one pixel mapped memory array were utilized,it would require sixteen memory accesses to change the data of thesixteen pixels. In the symmetrical pixel array, it is only necessary tomake one random access of the memory arrays A-P, with the data updatecircuit 78 activated to select the array to be written over at that rowand column address and in the desired pattern.

For example, if a pattern illustrated by the reference numeral 84 inFIG. 4 were to be drawn on the display, a conventional system wouldaccess each row defining the pattern 84 and change the column address tomodify the appropriate pixel memory locations. This would requireoperation in the page mode for the memory. The row address would then bechanged and this step repeated. The pattern 84 is comprised of thepixels H, L, and P in the pixel array in row 00, column 00, pixels E, F,J and N in the pixel array in column 01, row 00, the pixels D, H and Lin the pixel array in column 00, row 01 and the pixels B, F, I and J inthe pixel array in column 01, row 01. A conventional system wouldrequire six row accesses with each row access requiring two columnaccesses to write over all of the pixel data to form the pattern 84.However, in the symmetrical pixel mapping array of FIG. 3, only fouraccesses are required to form the pattern 84. The system would firstaccess memory cells in row 00, column 00 of all of the memory arrays A-Pand enable only memory arrays H, L, and P for writing to. With the WriteMask option selected for the memory 70-76 in FIG. 3, a new row accesswould be required prior to changing the enabled pixel arrays for row 00,column 01. However, if the Separate CAS option were selected, the pagemode would be utilized and only one row access made for updating thepixel information in column 00 and column 01.

By utilizing cascaded shift registers internal to the semiconductor chiphaving four pixel mapped arrays contained therein, only four pins arerequired to provide the 4×4 array. This allows for any configurationrequiring a symmetrical array that is two pixels wide or any multiplethereof. Therefore, a 4×4 symmetrical pixel array can be utilized, asillustrated in FIG. 3, or even a 16×16 pixel array can be utilized.

Circular Shift Register with Multiple Tapped Output

Referring now to FIG. 5, there is illustrated a schematic block diagramof a 256 bit shift register 86 with an associated 256 bit tap latch 88and an associated 256 element transfer gate 90. The shift register 86 issimilar to the shift registers 34-40, the tap latch 88 is similar to thetap latches 42-48 and the transfer gate 90 is similar to the transfergate 54 in FIG. 1. The transfer gate receives the bit lines B/L₀₀-B/L₂₅₅ on the input and has the outputs thereof connected to theindividual shift bits of the shift register 86 labeled "00" through"255," with the serial input being input to shift bit 255 and the serialoutput being output by shift bit 00. The tap latch 88 is operable to tapthe serial output at any one of the shift bits 00 through 255.

The shift output from shift bit 00 is input to a tristate buffer 92,which has the output thereof connected to a Single Pole Single Throwswitch 94. The switch 94 is similar to the switches 60 and 62. Asdescribed above, the switch 94 may not be utilized if the shift registeris configured similar to shift registers 34 and 38 with the Single PoleDouble Throw switches 56 and 58. The output of the switch 94 isconnected to the serial input of shift bit 255. The output of the taplatch is input to a tristate buffer 96, the output of which is connectedto one of the pins S₁ -S₃ which are referred to as "S_(i) " where "i" isequal from "1" to "3". The S_(i) pin is also input to a tristate buffer98, the output of which is connected to the serial input of shift bit255. This input is labeled SIN, whereas the output of the tap latch islabeled SOUT. The tristate buffers 92, 96 and 98 are controlled by theSOE signal. When the SOE signal is high, buffers 92 and 96 are disabledand buffer 98 enabled. This allows the pin S_(i) to serve as a serialinput pin. When SOE is low, buffer 98 is disabled and buffers 92 and 96enabled. This configures the shift register 86 as a circulating shiftregister with the output of shift bit 00 input back to shift bit 255 andthe output of the tap latch connected to the pin S_(i). Pin S_(i), inthis configuration, serves as one of the serial output pins. The switch94 is only opened, as described above, when the mask option is selectedwherein two shift registers in a single semiconductor chip are cascaded.

In the preferred embodiment, it is important to note that the serialoutput is always fed back from shift bit 00 to shift bit 255 and notfrom the output of the tap latch 88. However, it could be fed back fromthe tap point. With feedback from shift bit 00, the tap latch can beactivated to select the output from any one of the shift bits in theshift register 86 without affecting the order in which the datacirculates. For example, shift bit 64 could be selected as the outputshift bit such that the first bit appearing on the output would be thedata initially stored in shift bit 64, followed by the data initiallystored in the remaining shift bits 65-255. However, as the shift clockscontinue to shift data, the data stored in shift bit 255 is followedwith the data initially stored in shift bit 00. In this manner, theinitial order of the data stored in the shift register 86 can bemaintained independent of the tap position.

A counter (not shown) counts the number of shift clocks to provide acount output. The external microprocessor which controls the memoryprovides a reset for the counter on transfer of data to the shiftregister 86 and then monitors the count. The microprocessor can thentransfer data back to the memory at a predetermined count delayed by apredetermined number of shifts. For example, if it is desirable to shiftall of the data in a given row of memory by one pixel, it would only benecessary to count 255 counts of the shift clock from the initialposition and then transfer the data to the bit lines. This wouldeffectively shift the data by one.

Referring now to FIGS. 6a and 6b, a select line of the display isrepresented for three separate frames of the display wherein a frame isdefined as the time required to scan all of the lines on the display.The frames are referred to as FRAME1, FRAME2 and FRAME3 and the linethat is illustrated is referred to as line "N." In the illustratedexample, there are 256 pixels for each scan line of the display and a256 bit wide memory associated shift register is utilized. Aftertransfer of data to the shift register, the timing is such that 256shifts are made to output all of data contained in the shift registeronto the display for a given line. In FRAME1, the first pixelcorresponds to shift bit 00 which also corresponds to the data stored incolumn 00. The last bit of data shifted out at the end of the scan linecorresponds to shift bit 255, which also corresponds to column 255. Inorder to shift the data by one, the counter (not shown) counts thenumber of shift clock cycles and performs a transfer from shift registerto memory at the row address corresponding to that line at apredetermined shift count. The example illustrated in FIG. 6a requiresthe transfer of data from the shift register to memory to occur after255 shift clocks. At this count, the data originally in shift bit 00will now be in shift bit 01. A transfer at a count of 255 will result inthe data being shifted to the right by one pixel position correspondingto data being shifted to the next higher column address. Therefore, onthe next frame, transfer of data from memory to the shift registerresults in this shifted data being output. If a transfer from shiftregister to memory occurs for every count of 255, the data will appearto shift to the right one pixel for every scan. Therefore, scan threefor the same line will have the pixel shifted two pixels to the rightwith respect to FRAME1.

To shift one position to the left, the transfer of data from shiftregister to memory occurs after a shift count of one. This will resultin the data originally in shift bit 00 being in shift bit 255 and thedata initially in shift bit 01 being in shift bit 00, thus resulting ina shift to the left of one bit for each scan of the display. This isillustrated in FIG. 6b.

Referring now to FIG. 7a, there is illustrated three sequential framesof line N, similar to the frames of FIGS. 6a and 6b. However, in thisexample, the number of pixels on each line of the display is a multipleof 192 whereas the shift register and memory are 256 bits wide. The tapon the tap latch 88 is set to extract bits from shift bit 64 such thatthe first bit in the scan line will be data in shift bit 64 and the lastpixel will correspond to data in shift bit 255. In order to shift thedata by one to the right, the only change that is necessary is to changethe tap from shift bit 64 to shift bit 63. This is evidenced in FRAME2wherein the first pixel corresponds to data in shift bit 63 and the lastbit of data corresponds to data in shift bit 254. On the next frame,indicated by FRAME3, the tap is again incremented down such that it ispositioned at shift bit 62. By shifting the tap, the display can be"panned." However, the display can only be panned until the tap ispositioned at shift bit 00 wherein the display will correspond to databetween shift bit 00 and shift bit 191.

In order to display a constant changing background with a display havingless pixels than that provided in the serial shift registers 86, thecirculating shift register configuration can be utilized in conjunctionwith the tap latch 88. This is illustrated in FIG. 7b wherein the tap isset at shift bit 64 for the first frame, FRAME1, and then incremented toshift bit 65 and shift bit 66 in the next two successive frames,respectively. Since the shift register is a circulating shift register,192 shifts from the shift bit 65 will cause the data stored in shift bit00 to be output therefrom. In a similar manner, in FRAME3 tapping of theshift register 86 at shift bit 66 results in the data stored in shiftbit 00 and shift bit 01 corresponding to the last two pixels in the lineafter shifting.

Shift Register and Tap Latch

Referring now to FIG. 8, there is illustrated a schematic block diagramof a single shift bit in the shift register 86 of FIG. 5. The serialinput is referred to as "S_(IN) " and the serial output is referred as"S_(OUT) ". The serial input is connected to the gates of a P-channelFET 104 and an N-channel FET 106. The transistor 106 has the sourcethereof connected to V_(SS) and the drain thereof connected to thesource of an N-channel transistor 108. The transistor 104 has the sourcethereof connected to V_(DD) and the drain thereof connected to the drainof a P-channel transistor 110. The drain of the transistor 110 and drainof the transistor 108 are connected to a node 112 and the gate of thetransistor 110 is connected to SR1 and the gate of the transistor 108 isconnected to SR2. As described above, SR1 and SR2 are the inverted andnoninverted forms of the shift clock. Transistors 104-110 comprise thefirst stage of a shift bit. The second stage is comprised of P-channeltransistors 114 and 116 and N-channel transistors 118 and 120. Thetransistors 114 and 120 are configured similar to transistors 104 and106 and transistors 116 and 118 are configured similar to transistors110 and 108, respectively. The gates of the transistors 114 and 120 areconnected to the node 112 and the drain of the transistor 116 and thedrain of the transistor 118 are connected to the serial output. Acapacitor 122 is connected between the node 112 and VSS and a capacitor124 is connected between the serial output and V_(SS). The capacitors122 and 124 represent storage capacitance.

In operation, data is input on the capacitor 124 at the output of theshift bit which also connects it to the gates of the transistors 104 and106. This data clocked through to node 112 when SR1 is low and SR2 ishigh. If the data is a logic low level, transistor 104 conducts and ifthe data is a logic high level, transistor 106 conducts. When SR1returns to a high level and SR2 returns to a low level, the data isstored on the capacitor 122. To transfer data from node 112 to theserial output, SR1 is applied to the gate of transistor 118 and SR2 issupplied to the gate of transistor 116. Therefore, data is transferredwhen SR2 is low corresponding to SR1 being high. This is the oppositeconfiguration than that with respect to transfer of data to node 112.

Referring now to FIG. 9, there is illustrated three shift bits 126, 128and 130 connected in series. For each of the shift bits, transistors 104and 106 are represented by an inverting amplifier symbol 132 and thetransistors 114 and 120 are represented by an inverting amplifier symbol134. In a transfer cycle, the bit line is connected to the serial outputof each of the shift bits with SR1 being low and SR2 being high. Thiseffectively connects the data on the bit line to the input of theamplifier 134 for the next successive shift bit. The bit line (notshown) is then disconnected, with the signal being stored on thecapacitor 124. When the shift clock changes states, the signal on theoutput of the respective shift bit is transferred to the output of thenext shift bit.

Referring now to FIG. 10, there is illustrated a schematic diagram ofthe shift bits 255, 254 and 253 in a 256 bit shift register, with theserial input being input to the shift bit 255. The outputs of each ofthe shift bits are input to NAND gates 133, the other input of which isconnected to a tap latch signal corresponding to the output of the taplatch decode circuit 52. The output of each of the NAND gates 133 isconnected to the drain of a pass transistor 135, the source of which isconnected to a line 136. The gate of the each of the transistors 135associated with each of the shift bits is connected to the tap latchsignal. For example, the tap latch signal associated with the shift bit255 is TP255, the tap latch signal associated with the shift bit 254 isTP254 and the tap latch signal associated with the shift bit 253 isTP253.

The NAND gates 133 are each comprised of an N-channel transistor 138having the source thereof connected to V_(SS), the drain thereofconnected to the source of an N-channel transistor 140 and the gatethereof connected to the tap latch signal. The transistor 140 has thedrain thereof connected to the drain of P-channel transistor 142 and thegate thereof connected to the output of the respective shift register.The transistor 142 has the source thereof connected to V_(DD) and thegate thereof connected to the output of the shift register associatedtherewith. When the tap latch signal is present, the transistor 138provides a low resistive path to V_(SS) and the output on the drain ofthe transistor 140 is a function of the shift register output. Althoughnot a true NAND function, when the transistor 138 is turned off, theassociated pass transistor 135 is also turned off. The NAND functionprovided by this configuraton reduces power drain of unselected taps.

The latch circuit for generating the latch signals TP255-TP00 iscomprised of cross coupled inverters 144 and 146, each having the outputconnected to the input of the other for storing a logic state thereon.The input of the inverter 144 and output of the inverter 146 areconnected to a node 148. The node 148 is connected to the drains of anN-channel transistor 150 and a P-channel transistor 152, the sources ofwhich are connected to a decode line Y255 corresponding to the columnaddress 255. The node 148 is connected to the gate of the passtransistor 134 through a series resistor 154. The gate of the transistor150 is connected to a latch signal LCH and the gate of the transistor152 is connected to the inverted latch signal LCH. In operation, thepresence of the LCH signal and the decode signal causes a high logicsignal to be latched in the cross coupled inverters 144 and 146, thusstoring the latch signal TP255 therein.

The shift bit 254 has an associated cross coupled inverter pair 156 and158 and the shift bit 253 has an associated cross coupled inverter pair160 and 162. The decode signal Y254 is input to a parallel pair of N-and P-channel transistors 164 and 166 and the decode signal Y253 isinput to the cross coupled inverter pair 160 and 162 through a pair ofN- and P-channel transistors 168 and 170. Series resistors 172 and 174are provided for the shift bits 254 and 253, respectively.

In an important aspect of the present invention, the tap point isdetermined by an address which is decoded by the column address decoder.Therefore, only one decoder is required to both address a column andalso address the particular tap point that constitutes the serial outputof the serial access shift register. This significantly reduces theamount of circuitry required to provide the decode function for the tapof the shift register. Prior systems have utilized a separate decoder todetermine which of the taps is to be selected. In addition, each shiftbit in the register can be selected, thus providing more versatility forvarious applications.

Physical Layout

Referring now to FIG. 11, there is illustrated a schematic block diagramof the chip innerconnections and the approximate physical layout of thememory array 10 and associated transfer gate 54, shift register 34, taplatch 42 and column decoder 30. For illustrative purposes, only column00 and column 01 are illustrated with their associated output circuits.Column 00 outputs an inverted and noninverted bit line for the columnaddress 00 with B/L 00 connected to the drain of an N-channel transistor176 and B/L ₀₀ connected to the drain of an N-channel transistor 178.The source of the transistor 176 is connected to the I/O line labeledI/O₁ and the source of the transistor 178 is connected to the invertedI/O line labeled I/O₁. The gates of the transistors 176 and 178 are bothconnected to the column decode line 00 for activation thereof whencolumn address 00 is selected. In a similar manner, an N-channeltransistor 180 is connected between bit line B/L 01 and the I/O line,and an N-Channel transistor 182 is connected between B/L ₀₁ and I/O₁line. The gates of the transistors 180 and 182 are connected to thecolumn decode line 01.

The transfer gate 54 is comprised of a pass transistor 184 having thedrain thereof connected to the noninverted bit lines and the sourcethereof connected to the input of the respective shift bit. The gates ofall the transistors 184 in the transfer gate circuit 54 are connected tothe transfer control signal SCT. The tap latch 42 provides a latch foreach shift bit and it is controlled by the column decode line associatedtherewith. For example, column decode line 00 is connected to thecontrol input of tap latch TL00. The output of tap latch TL00 is inputto the gate of a pass transistor 186, the drain of which is connected tothe output of shift bit 00 and the source of which is connected to theSOUT line. A similar pass transistor 188 is connected between the outputof shift bit 01 and the SOUT terminal, with the gate thereof connectedto tap latch TL01.

Referring now to FIG. 12, there is illustrated the preferred embodimentof the physical layout of the memory of FIG. 1, with each of the memoryarrays 10-16 having 256 rows and each of the associated shift registers34-40 having 256 shift bits. Like numerals refer to like parts in thevarious Figures. The memory arrays 10 and 12 are combined into arrays190 and 192. The array 190 contains column 00 through column 127 andarray 192 contains column 128 through column 255. Each of the arrays190-196 contain one half of columns of memory cells corresponding to twoof the I/O lines I/O₀ -I/O₃. The columns are intertwined such thatcolumns having the same address are adjacent to each other. For example,column 00 of array 10 is the first physical column in array 190 andcolumn 00 of array 12 is the second physical column in array 190. TheI/O line is indicated by the subscript "0" for array 10 and "1" forarray 12 and each is associated with the appropriate column address. Anarray 194 and an array 196 are provided on the other side of thesemiconductor chip and comprise the columns of elements in the memoryarrays 14 and 16, with the array 194 containing column 0 through column127 and array 196 containing column 128 through column 255. Although notshown, the arrays 190 and 192 and arrays 194 and 196 are separated bythe row decoder.

The shift registers 34 and 36 associated with the arrays 10 and 12 aredisposed adjacent the arrays 190 and 192, with the shift bits associatedwith the respective columns and connected thereto. The transfer gatecircuits 54 are not illustrated for simplicity purposes. The shiftregisters 38 and 40 are disposed adjacent the arrays 194 and 196 withthe shift bits therein connected to the outputs of the respectivecolumns. The shift registers 34-40 are divided into two halves, one halfassociated with the arrays 190 and 194 for shift bits 00 through 127 andthe other half associated with arrays 192 and 196 for shift bits 128through 255.

The tap latches 42 and 44 are combined into one tap latch 198 that isdisposed between the column decoder 30 and the shift registers 34 and36. The tap latches 46 and 48 are combined into one tap latch 200disposed between the column decoder 30 and the shift registers 38 and40. The random access I/O circuit and transfer gates are disposedbetween the shift registers and the respective arrays 190-196, asillustrated in FIG. 11.

Referring now to FIG. 13, there is illustrated a timing diagram fortransferring data from the memory to the associated serial shiftregister. To effect this transfer, it is necessary for the TR/QE signalto be at a low level when RAS changes to a low level. The W signal goeshigh to indicate the Read Transfer operation for transferring data frommemory to the shift registers and then RAS goes low to select theappropriate row address. After a predetermined duration of time, the bitlines separate and the data is stored in the output of the associatedsense amps of each of the columns. The TR/QE signal then goes high, thusgenerating the SCT signal to the transfer gates 54 and connecting thebit lines of each column with the associated shift bit in the shiftregister. The rising edge of TR/QE also determines the minimum amount oftime before the rising edge of the next shift clock signal SCLK occurs,as indicated by a causality arrow 202. In the preferred embodiment, thisis approximately 10 ns. This places the data from the bit lines on theinput of the shift bits, thus loading the data therein. On the risingedge of SCLK, the data is transferred to the output of the shift bit, asindicated by the causality arrow 204. On the rising edge of TR/QE, allof the old data is removed from storage in the shift bits and new datais stored therein. However, the first bit of data is not shifted outuntil a predetermined duration of time after the rising edge of SCLKoccurs.

Referring now to FIG. 14, there is illustrated a timing diagram fortransferring data from the shift register to storage in memory. Thisdata can either be input on the serial input, shifted in and thentransferred to memory or it can be shifted from one row in the memory tothe shift register and then transferred back into memory in a differentrow. To initiate a transfer between the shift register and memory, TR/QEgoes low before RAS. The W signal is also low to indicate a WriteTransfer operation for transferring data from the shift register to thememory. RAS then goes to a low level to read the row address andinitiate the Write Transfer operation and also inhibit the shift clock.After a predetermined duration of time, TR/QE goes high to initiate datatransfer and connect the outputs of the shift bits with the respectivebit lines. The data present in the shift bits will then be transferredto the bit lines, sensed, latched by the internal sense amplifiers (notshown) and stored in memory. The shift clock will then be restartedafter a predetermined duration of time relative to the occurance of therising edge of the transfer signal. The rising edge of the shift clockmay be delayed to ensure complete transfer of data prior to shifting. Inthe timing diagram illustrated in FIG. 14, the memory is configured suchthat the S₀ -S₃ pins are multiplexed for both SIN and SOUT. Therefore,the SOE signal must be a high signal level to input data to therespective shift register.

Write Mask/Separate CAS

Referring now to FIG. 15, there is illustrated a schematic block diagramof the enable circuit 64, I/O buffer 66 and arbiter 68 of FIG. 1 fordistinguishing between the Separate CAS inputs CAS₀ -CAS₃ and the WriteMask feature. The I/O buffer 66 is comprised of separate I/O buffers208, 210, 212 and 214 which are connected to the W₀ /D₀ -W₃ /D₃ inputs.The I/O buffers 208-214 are operable to receive or output only data. TheW₀ -W₃ signals are each input to a separate Single Pole Double Throwswitch 216, of which only one is shown. The output of the switch 216 isconnected to the data input of a D-type flip-flop 218, with the switch216 being operable to switch the data input between ground and therespective W₀ -W₃ input. For simplicity purposes, only the circuitryassociated with the W₀ input will be described. The clock input of theflip-flop 218 is connected to a clock signal φR1 and the clear inputthereof is connected to a signal φ R1. φR1 is RAS delayed by apredetermined amount of time. This delay is provided by a noninvertingcircuit 220 and φR1 is provided by an inverting circuit 222. TheQ-output of the flip-flop 218 is the signal W₀ '. The remaining outputsof the flip-flops not shown will be W₁ ', W₂ ' and W₃ '.

The W₀ ' signal is input to an arbitration circuit 224 to both determinewhich of the Write Mask or Separate CAS features is selected duringfabrication of the memory and which of the I/O circuits 208-214 are tobe enabled with the enable circuit 64.

The CAS₀ -CAS₃ signals are input to one input of a switch circuit 226comprised of four Single Pole Double Throw switches, the outputs ofwhich are connected to separate inputs of a four inverter circuit 228.Each of the CAS₀ -CAS₃ signals is associated with one Single Pole DoubleThrow switch in the switch circuit 226 which is operable to switch theoutput between V_(SS) and the CAS₀ -CAS₃ signals. The output of each ofthe inverters in the inverter circuit 228 is labeled W₀ ", W₁ ", W₂ "and W₃ ", corresponding to each of the CAS₀ -CAS₃ signals. Forsimplicity purposes, only the circuitry associated with the W₀ " circuitwill be illustrated. This signal is input to the arbitration circuit224.

The CAS₀, CAS₁ and CAS₂ signals are input to Single Pole Double Throwswitches 230, 232 and 234, respectively. The output of the switches230-234 is input to separate inputs of a four input NAND gate 236. TheCAS₃ signal is input to the remaining input of the four input NAND gate236. The switches 230-234 are operable to connect the three associatedinputs of the NAND gate 236 with either the respective CAS₀ -CAS₂signals or V_(DD). These switches, in conjunction with the switches inthe switch bank 226, are associated with the Mask Write option which isdetermined during fabrication of the semiconductor device. If the deviceis to be controlled by separate CAS signals, the switches 230-234 andthe switches in the switch bank 226 will be disconnected from V_(DD) andconnected to the respective CAS₀ -CAS₃ signals. In a similar manner, theswitches 216 associated with the W₀ -W₃ signals will be connected toground. The position of all mask programable switches in FIG. 15 isillustrated for the Separate CAS feature. For operation in the WriteMask mode, the opposite position of all the switches will be selectedduring fabrication of the device. However, it should be understood thatthese devices can be user selectable without requiring a permanentimplementation in the metal mask.

The high output of the NAND gate 236 is present whenever any of the CAS₀-CAS₃ signals go low. Since no switch is associated with the CAS₃signal, this constitutes the CAS input when the Write Mask feature isselected and the switches 230-234 are connected to V_(DD). The output ofthe NAND gate 236 is input to one input of a three input AND gate 238,one input of which is connected to the φR2 signal and the remaininginput of which is connected to the WM/WE input through an inverter 240.The φR2 signal is generated by delaying the φR1 signal through a buffer221. The output of the AND gate 238 constitutes the Write signal andthis signal is input to the arbitration circuit 224. The Write signal isgenerated whenever one of the CAS₀ -CAS₃ signals is low, when the WM/WEsignal is low and when the φR2 signal is generated.

The WM/WE signal is also input to the D-input of a D-type flip-flop 242which constitutes the Write Mask latch. The clock input of the flip flop242 is connected to the φR1 signal and the preset input thereof isconnected to the φR1 signal. The Q-output of the flip-flop 242 islabeled WM' and the Q-output is labeled WM'. Whenever the signal on theWM/WE input goes low prior to generation of the φR1 signal, this data isclocked through to the output, which corresponds to selection of theWrite Mask feature. Whenever a standard Write function is beingperformed, the signal on the D-input of the flip-flop 242 goes low afterRAS falls low and φR1 is generated. The state of the outputs on theflip-flop 242 does not change in this condition.

The WM' signal is input to one input of an AND gate 244, the other inputof which is connected to the Write signal output by the AND gate 238.The output of the AND gate 244 is labeled EN to indicate an enablefunction and is input to the arbitration circuit 224. The WM' signaloutput from the flip-flop 242 is also input to the arbitration circuit224.

The arbitration circuit 224 is comprised of a Single Pole Double Throwswitch 246 which receives the W₀ ' and W₀ " signals with the outputthereof connected to one input of a three input AND gate 248. The switch246 is a mask selectable option similar to the switch 216, the switchesin the bank 226 and the switches 230-234 are programmed duringfabrication. The switch 246 is operable to select between the W₀ " andW₀ ' signals for input to the AND gate 248. When the Write Mask featureis selected, the W₀ ' signal is selected by the switch 246 and when theseparate CAS feature is selected, the W₀ " signal is selected. The othertwo inputs of the NAND gate 248 are connected to the Write signal andV_(DD). The output of the AND gate 248 is connected to one input of anOR gate 250, the other input of which is connected to the EN signaloutput by the AND gate 244.

In operation, the arbitration circuit 224 provides an output from the ORgate 250 in response to one of the CAS₀ -CAS₂ signals being present orthe Write Mask feature being selected. With the Write Mask feature, thesignal on the input of the WM/WE terminal must be latched into theD-type flip-flop 242 to output a high signal for

the WM' signal from the Q-output of the flip-flop 242. The WM/WE signalalso places a high signal on AND gate 238. Subsequent generation of theWrite signal on the output of the AND gate 238 raises two inputs of thethree input AND gate 248 to a high signal level. When the W₀ signal ispresent and latched into the flip-flop 218 to generate a W₀ ' signal,the output of the AND gate goes high, thus raising the output of the ORgate 250 to a high level. In the separate CAS mode where the Write maskfeature is deselected, the presence of a logic low level on any one ofthe CAS signals causes the output of the NAND gate 236 to go to a highlevel and this will cause the Write signal on the output of the AND gate238 to be generated whenever a Write signal is present on the WM/WEinput and φR1 is generated in response to RAS being generated. Since theswitches 243 and 245 in the Separate CAS mode are switched away from theoutputs of the flip-flop 242, one input of the AND gate 244 is low,maintaining EN signal low and the input of the AND gate 248 associatedwith the switch 245 is maintained at a high signal level. Therefore, ANDgate 248 is controlled by the Write signal and the W₀ " signal switchedthrough the switch 246. Therefore, the arbitration circuit 224 onlyproduces an output from the OR gate 250 in response to the W0" signal.

The output of the R gate 250 of the arbitration circuit is input to atristate buffer 252 which is part of the enable circuit 64 and isconnected to the I/O buffer 208 associated with the D₀ line. Thetristate buffer 252 is utilized only for incoming data with a buffer 254providing for outgoing data. Only the incoming data is buffered withtristate buffer 252 which is controlled by the arbitration circuit 224.In a similar manner, arbitration circuits 256, 258 and 260 areassociated with tristate buffers 262, 264 and 266 for selectivelyenabling incoming data from the buffers 210, 212 and 214, respectively.The arbitration circuits 256-260 are similar to the arbitration circuit224 and they are controlled by the W₁ "-W₃ " signals, the W₁ '-W₃ 'signals or the EN signal. The EN signal is present when the Write Maskfeature is available but not enabled in which case all four I/O buffers208-214 are enabled. Each of the arbitration circuits 256-260 has a maskprogrammable switch internal thereto similar to the switch 246 inarbitration circuit 224.

Referring now to FIG. 16, there is illustrated a timing diagram for theSeparate CAS feature. In utilizing the Separate CAS feature, RAS goeslow to select

the row address. Thereafter, one or more of the CAS₀ -CAS₃ signals goeslow to load a column address into the column address latch.Additionally, the CAS₀ -CAS₃ signals determine which of the I/O buffersis enabled to allow writing of data to the selected column in theselected row. When selected, data is written to that column position inthe selected one of the arrays and then CAS returns to a high level. Forillustrative purposes, the first column address is associated with allfour signals CAS₀ -CAS₃ going low at time T₁. The CAS signals returnback to a high signal level at time T₂. With RAS remaining low, anothercolumn address is placed onto the address lines A0-A7 and CAS₀ and CAS₂change to a low level at time T₃. This results in only two of the I/Obuffers being enabled for writing data to only two of the arraypositions. The CAS₀ and CAS₂ signals go back to a high level at time T₄and then another column address is latched into the column address latchat time T₅ when CAS₁ and CAS₂ go low. This allows only writing of datato the array associated with the CAS₁ and CAS₂ signals.

By utilizing the Separate CAS option, as compared to the Write Maskoption, the memory can be operated in the page mode whereby a single rowis selected and then the column address changed and a Write performedafter each column is accessed. This allows updating of the pixelinformation in multiple arrays on the single chip which shares a commoncolumn and row decoder. Without the circuit described in FIG. 15,separate column decodes would be required for each array on the chip,thus increasing the density and complexity of the semiconductor circuit.

Midline Load

When data is transferred from memory to the serial shift register, it isimportant that all of the data in the shift register first be output tothe display or storage elsewhere prior to reloading the shift register.Normally, this presents no problem since the shift register is mapped tothe number of pixels in a given scan line. For example, a 256 bit shiftregister would map directly onto a display having a line width 256×npixels across where n is some integer. The transfer from memory to shiftregister could then occur during the retrace time, thus providingsufficient time to ensure that all data is out of the shift register andto load the shift register with new data.

Heretofore, the shift clock was inhibited during the retrace time andduring transfer of data from the memory to the shift register and thenallowed to initiate shifting upon beginning of the next scan line.However, some displays have a pixel length for each scan line that isnot a multiple of the width of the shift register. For example, a pixellength of 960 would require a 960 bit wide memory. If a symmetricalarray of four serial access memorys were utiltized, each having a 256bit wide shift register associated therewith, only 240 of the shift bitsin each of the shift registers would be required for a scan line. Theremaining sixteen bits in each of the shift registers would either havethe data therein discarded or output as the first sixty four pixels onthe next scan line. However, this would require transfer of data fromthe memory to the associated shift register during the middle of a scanline. A conventional scan rate is approximately 12 ns per pixel. Thiswould require the shift registers to shift data through at a 48 ns rate.The data must therefore be loaded within 48 ns. The time required fordata to be transferred to the shift bits from the bits lines isapproximately 5 ns-10 ns for a conventional memory. If a sufficient timeis not allowed for the data to be transferred from the bit lines to theinputs of the respective shift bits, the data may be invalid. Therefore,the timing relationship between the initiation of the transfer cycle andthe next data shift is important to effect a proper transfer of dataduring one shifting cycle.

The clock and control generator 69 in the memory of FIG. 1 provides thecircuitry for effecting a proper transfer of data without requiring theuser to place exacting requirements on his timing relationship for theTR signal and the shift clock. That is, the circuit of the presentinvention is tolerant to slight timing deviations in the TR signal withrespect to the last cycle of the shift clock. This tolerance allows theTR signal to occur before or after the optimum time for the occurrenceof the actual transfer sequence, as Will be described hereinbelow.

Referring now to FIG. 17, there is illustrated a schematic diagram ofthe circuitry for the midline load feature. The TR signal is inputthrough to inverters 280 and 282 to a node 283 labeled TR" and throughan inverter 284 to the D-input of a flip-flop 286 which is the transferlatch. The Q-output of the flip-flop 286 is labeled TRL and a Q-outputis labeled TRL. The flip-flop 286 is clocked by signal φR1' which is aninternal version of the RAS signal. As well be described hereinbelow theRASI signal is identical to the RAS signal upon initiation, but RASI canbe controlled to remain low for a predetermined duration of time afterRAS has gone high. RASI gives rise to signals φR1' and φR1' which aresimilar to signals φR1 and φR1', as described with reference to FIG. 15.The preset input of flip-flop 286 is connected to the signal φR1'. TheTRL output is connected to one input of a three input AND gate 288, oneinput of which is connected to the node 283 which is the TR' signal. Theoutput of the AND gate 288 is connected to one input of a NOR gate 290,the output of which comprises the STP signal, which is the signal thatstops or inhibits the shift clock. The other input of the NOR gate 290is connected to a delayed transfer signal XFRD. The XFRD signal isconnected to the inverted input of the AND gate 288. The delayedtransfer signal XFRD is generated from a transfer signal XFR and delayedthrough a delay gate 292. The XFR signal is generated on the output of aNAND gate 296. The NAND gate 296 has one input thereof connected to theinverted XFRD signal, one input thereof connected to a signal "XBOOT"and the remaining input thereof connected to the output of the AND gate288. The XBOOT signal is a signal which is generated in conventionaldynamic memories to boot the word line above V_(DD). Therefore, theoutput of the NAND gate 296 is low when a transfer sequence has beeninitiated and XBOOT goes high. The output of the NOR gate 294 is highonly when both the output of the inverter 284 and the output of the NANDgate 296 are low, thereby preventing the generation of the transfersignal until XBOOT has occurred. Since XBOOT does not occur until thebit lines have had sufficient time to separate to a predetermined level,the bit lines will not be connected to the inputs of the shift bitsuntil the bit lines have stabilized. This prevents invalid data frombeing generated due to the occurrence of a transfer signal prior to thetime that the bit lines have stabilized.

The WE signal is input to the D-input of a flip-flop 298, the Q-outputof which is labeled SRW and the Q-output of which is labeled SRW. Theflip-flop 298 is clocked by the φR1' signal and the preset input isconnected to the φR1' signal. The SRW signal is changed to a high levelonly when the WE signal is low prior to the occurrence of RASI goinglow. The SRW high signal indicates a Read Transfer wherein data istransferred from the memory to the shift register and the SRW highsignal indicates a Write Transfer where data is transferred from theshift register to memory. In the Read Transfer mode, it is necessary toselect the Word Line and then perform a transfer whereas in the WriteTransfer mode, it is necessary to select SCT first, and then perform thetransfer via the word line.

The SRW signal is input to one input of an NAND gate 300 and one inputof a NAND gate 302. The other inputs of the NAND gates 300 and 302 areconnected to the TRL signal. The SRW signal is connected to one input ofa NOR Gate 304 and one input of an OR gate 306. The other inputs of theNOR gate 304 and OR gate 306 are connected to the TRL signal. The outputof the NAND gate 300 is connected to one input of AND gates 308 and 310.The output of the NOR gate 304 is connected to one input of AND gates312 and 314. The AND gates 308 and 314 have the other inputs thereofconnected to a signal AX_(O) and the AND gates 310 and 312 have theother inputs thereof connected to a signal AX_(O). The signal AX_(O) iscontrolled by the least significant bit of the row address signal. Theoutput of the AND gate 308 is connected to the enable input of atristate buffer 316, the output of the AND gate 310 is connected to theenable input of a tristate buffer 318. The output of the AND gate 312 isconnected to the enable input of the tristate buffer 320 and the outputof the AND gate 314 is connected to the enable input of a tristatebuffer 321. The outputs of the buffers 318 and 320 are connectedtogether and labeled XIA and the outputs of the buffers 316 and 321 areconnected together and labeled X1B. A signal labeled X₁ is input to thebuffers 316 and 318 and the XFER signal from the output of the NOR gate294 is connected to the inputs of buffers 320 and 321. The signal X1represents the Word Line driver signal which is normally generated inthe conventional circuit. The output of the NAND gate 302 is connectedto the enable input of a tristate buffer 322 and the output of the ORgate 306 is connected to the enable input of a tristate buffer 324. Thebuffer 322 receives the XFR signal on the input thereof and generatesthe SCT signal for connection to the transfer gate 54 and the buffer 324receives the X1 signal on the input thereof to generate the SCT signalon the output thereof to the transfer gate 54.

In operation, the presence of the SRW low signal indicates a ReadTransfer and requires the Word Line to be high before the transfersignal occurs. The output of NAND gate 300 will be high, thus enablingAND gates 308 and 310. The output of NOR gate 304 will be low, disablingAND gates 312 and 314. AND gates 312 and 314 control the buffers 321 and320 to select the XFR signal as a function of the state of AX_(O) andAX_(O). In the Write Transfer mode where SRW is high, the output of NORgate 304 is high and the output of NAND gate 300 is low, deselecting ANDgates 308 and 310 which control the operation of buffers 316 and 318.The transfer signal SCT is controlled as a function of the XFR signal orthe X1 signal by the state of the OR gate 306 and the NAND gate 302. TheOR gate 306 outputs a high signal when either the SRW signal is high orthe TRL signal is high. The NAND gate 302 outputs a high logic signalwhen either TRL is low or SRW is low.

Whenever the transfer signal occurs, it is necessary to maintain the SCTsignal active for a predetermined period of time in order to allowsufficient time for the data to be transferred to or from the inputs ofthe respective shift bits. To provide for late occurrence (relative toRAS going high) of the TR signal, RAS is delayed from going from a lowlevel to a high level for a predetermined duration of time. This is aninternal function and does not affect the actual logic level of RASexternal to the semiconductor memory. An inhibit circuit 326 is providedthat is disposed in series with the RAS signal and the remaining RAScontrol signals to the semiconductor chip. As described above, this isdenoted as RASI. RAS is also input to one input of an AND gate 328, theother input of which is connected to the TR signal output from theinverter 284. The output of the AND gate 328 is input to a delay circuit330, the output of which controls the inhibit circuit 326. The AND gate328 outputs a signal when RAS goes high and TR goes high, indicatingthat a transfer is taking place. RAS is inhibited from going high withrespect to the remainder of the circuit until a predetermined durationof time after the rising edge of TR has occurred. If the rising edge ofTR occurs a sufficient amount of time prior to the rising edge of RAS,the rising edge of RASI is coincident with the rising edge of RAS. RASIis also input to invertor 331 to generate φR1' and buffer 333 togenerate φR1'.

Referring now to FIG. 18, there is illustrated a timing diagram forloading of data from the memory to the shift register. When the risingedge of TR occurs, it gives rise to the SCT signal, as indicated by anarrow 332. However, the SCT signal cannot be generated until the XBOOTsignal is generated, as indicated by the input signals to the NAND gate296 in FIG. 17. Therefore, the transfer cannot begin until the bit lineshave sufficiently separated. Since XBOOT does not occur until after thebit lines begin to separate, this will ensure that a transfer operationis not initiated prior to separation of the bit lines. The rising edgeof the TR signal also changes the state of the stop clock signal STP toa low level, as indicated by an arrow 334. This signal remains low untilthe physical transfer of data is comp1ete and then changes to a highsignal level. While the stop clock signal is at a low logic level, theleading edge of the next clock signal in the SCLK waveform will beinhibited. However, if the rising edge of TR occurs a sufficient amountof time prior to the leading edge of the stop clock signal, theoccurrence of the leading edge of the SCLK signal will not be affected.The rising edge of the SCLK signal will cause data to be shifted throughthe shift bits and the new data to appear on the output of the shiftregister, as indicated by the SOUT signal.

When the TR signal occurs early, it is necessary to prevent the SCTsignal from being generated until after the bit lines have stabilized.The early transfer signal is indicated by a rising edge 336 on the TRwaveform. This occurs prior to the time at which the bit lines havesufficiently separated. However, the SCT signal is not generated untilthe rising edge 338 of XBOOT occurs. At this time, the SCT signal isgenerated, as indicated by a dotted line. The delay of the SCT signal isindicated by "D1".

When the rising edge of the TR waveform occurs late, it is necessary tomaintain the SCT signal active and the bit lines separated for apredetermined amount of time to allow transfer of data to the shift bitsbefore the cycle ends. In addition, it is also necessary to inhibitserial shifting of data in the shift register until complete transfer ofdata to the shift register has occurred. The late transfer signal isindicated by a rising edge 340 on the TR waveform which gives rise to afalling edge 342 on the STP waveform. As described above, the risingedge of the next SCLK signal cannot occur until the STP signal has againreturned to a high level. This is indicated by a rising edge 344 whichallows the SCLK signal to go high, as indicated by a rising edge 346.The duration of time between the falling edge 342 and the rising edge344 allows sufficient time for the data to be transferred from the bitlines to the respective shift register. This must occur prior togeneration of the leading edge of SCLK which clocks the new data outonto the output of the shift register. In addition to maintaining SCTon, it is also necessary to maintain the bit lines in the proper datastate which is accomplished by delaying the internal change of RASI froma low to a high level. This is indicated by an arrow 348 which is theresult of the inhibit circuit 326, described above with reference toFIG. 17.

In summary, there has been provided a semiconductor memory whichutilizes four pixel mapped memories having the bits therein mapped tolocations directly corresponding to pixels on a display. Each of thememory arrays has a serial shift register associated therewith andtransfer gates for transfer of data therebetween. The serial shiftregister can either be connected in a circulating fashion with eitherserial in access or serial out access to each of the shift registersrequiring only one pin per shift register. Alternately, the shiftregisters can be cascaded such that there are two pairs of cascadedshift register/arrays each pair with one serial input and one serialoutput requiring only one pin per array. Each of the shift registers isoperable to be tapped at any output location therein. The location isdetermined from a decoded address which is received from the columndecode line, thus requiring no additional decoding circuit to determinethe tap point. Circuitry is provided to allow separate writing tolocations in the four arrays without requiring separate decodingcircuits. All four arrays share the same row and column decoders. Thecircuitry uses either a Write Mask format or separate column addressstrobes. Either feature can be utilized by selecting a metal mask optionfor the feature prior to fabrication of the device. Circuitry is alsoprovided for allowing transfer of data from memory to shift registerduring the last cycle of the shift clock such that new data canimmediately follow the old data without requiring the shifting operationto be temporarily terminated.

Although the preferred embodiment has been described in detail, itshould be understood that various changes, substitutions and alterationscan be made therein without departing from the spirit and scope of theinvention as defined by the appended claims.

What is claimed is:
 1. A semiconductor memory, comprising:a memory arrayhaving a plurality of memory elements arranged in rows and columns forstoring data therein; row decode means for receiving and decoding a rowaddress and selecting one of the rows of memory elements; column decodemeans for receiving and decoding a column address and selecting one ofthe columns of memory elements; said row and column decode meansoperating in conjunction to select one of the memory elements in saidarray for transferring data to or from the accessed memory element;shift register means for selectively accessing all of the data in thememory elements in the addressed row in said array, said shift registermeans having a plurality of storage locations for storing the accesseddata in a serial format according to the order of the columns in saidarray such that the accessed data can be serially output therefrom; tapmeans for storing tap decode information, and for selecting a storagelocation in said shift register means responsive to said tap decodeinformation, said selected storage location containing the first data tobe serially output; said column decode means receiving and decoding anexternal tap address to provide tap decode information to said tap meanscorresponding to the storage location containing the first data to beserially output, said tap decode information defining any of the storagelocations in said shift register means; and control means for shiftingdata out of said shift register means for the selected storage locationsuch that only data between the selected storage location and the lastpiece of data in the serial format is output.
 2. The semiconductormemory of claim 1 wherein said shift register means comprises:a serialshift register having a plurality of shift bits equal in number to thenumber of columns in said array, wherein each said storage location insaid shift register means comprises one of said shift bits; and transfermeans for selectively connecting the input of each of the shift bits insaid serial shift register to the accessed memory elements in theaddressed row for tranfer of data to or from the associated one of saidshift bits, said transfer means controlled by said control means.
 3. Thesemiconductor memory of claim 2 wherein said tap means comprises:latchmeans for storing said tap decode information, said tap decodeinformation determining the shift bit containing the first bit to beserially output; and a plurality of pass gates, each of said pass gatesconnected between the output of one of said shift bits and a singleoutput node and controlled by said tap decode information stored in saidlatch means, activation of the select one of said pass gates connectingthe output of its associated one of said shift bits to said output node.4. A semiconductor memory, comprising:a plurality of memory arrays eachhaving an equal number of memory elements arranged in rows and columnsfor storing data therein; row decode means for receiving and decoding arow address and selecting one of the rows of memory elements in each ofsaid arrays; column/tap decode means for receiving and decoding acolumn/tap address and operable in a first mode to provide a columndecode signal and in a second mode to provide a tap decode signal; saidrow decode means and said column/tap decode means in the first modeoperable to access one of the memory elements for transfer of data to orfrom the accessed memory elements in each of the arrays; transfer meansassociated with each of said arrays for accessing all of the memoryelements in the addressed row in the associated one of said arrays;shift register means associated with each of said transfer means forstoring the accessed data in a serial format, the serial formatcorresponding to the order of columns from which data was accessed bysaid transfer means; tap means operable in response to said column/topmeans operating in the second mode for selecting a tap position withinthe serial format in said register means from which data is to beoutput, said tap decode signal defining any position in the serialformat as the tap output; and control means for selecting the first orsecond mode of said column/tap decode means; wherein said transfer meansis responsive to said control means so that, responsive to the selectionof said second mode, said transfer means transfers said accessed data tosaid shift register means; wherein said tap means is responsive to saidcolumn/tap decode means so that said tap means selects the tap positionresponsive to said tap decode signal generated by said column/tap decodemeans in said second mode; and wherein said shift register means iscontrolled to shift the serially formatted data therethrough and outthrough the tap position.
 5. The semiconductor memory of claim 4 whereinsaid shift register means comprises a serial shift register having aplurality of shift bits equal in number to the columns in the associatedone of said arrays and each associated with one of the columns in saidassociated array.
 6. The semiconductor memory of claim 5 wherein saidtap means comprises:means for storing said tap decode signal output bysaid column/tap decode means; and a plurality of pass gates connectedbetween the output of each of said shift bits and a common output node,each of said pass gates controlled by said tap decode signals stored insaid latch means to connect the output of the respective one of saidshift bits to said common node.
 7. The semiconductor memory of claim 4wherein said transfer means comprises a plurality of pass gatesassociated with each of the columns in the associated one of said arraysand the input of each of the associated ones of said shift bits andoperable in response to said control means to connect the output of theaccessed one of said memory elements in each of the columns of saidarrays to the input of the associated one of said shift bits.
 8. Thesemiconductor memory of claim 4 wherein said column/tap decode meanscomprises:a column address latch for storing said column/tap addresstherein; and means for decoding the contents of said column addresslatch to provide the corresponding column decode signal or tap decodesignal, said means operable to generate one of a plurality decodesignals equal in number to the columns of the associated one of saidarrays, only one of said output decode lines activated for a givenaddress in said column address latch.
 9. The semiconductor memory ofclaim 4 wherein said control means is operable to shift data from saidshift register means through said tap position selected by said tapmeans in an ascending order from the tap point to the data output by thehighest order one of the columns in said associated array.
 10. A methodfor serially accessing data from a semiconductor memory array havingmemory elements arranged in rows and columns, comprising:decoding a rowaddress to select one of the rows of memory elements; enabling acolumn/tap address decoder to decode a column/tap address to output atap decode signal, said column/tap address decoder being adapted todecode said column/tap address to select one of the memory elementsdefined by the selected row when not so enabled; transferring the datafrom all of the memory elements in said selected row to the shift bitsin a serial shift register, the shift bits arranging the transferreddata in a serial format; tapping the shift register at the shift bitcorresponding to the tap decode signal to provide a tap point for theserial output of data stored in the shift register; and controlling theshift register to shift the data stored therein out from the tap point.11. The method of claim 10 wherein each of said shift bits in said shiftregister has an output, and wherein a pass gate is associated with eachshift bit, said pass gate being connected between the output of itsassociated shift bit and the serial output of said shift register;andfurther comprising:storing the tap decode signal in a tap latch; andenabling the pass gate corresponding to the tap decode signal stored insaid tap latch, so that the output of said shift bit associated withsaid enabled pass gate is connected to said serial output of said shiftregister.
 12. A memory device, comprising:an array of addressable memorycells, arranged in rows and columns; row address means, responsive to arow address signal, for selecting a row of memory cells in said array;column address means, responsive to a column address signal, forselecting a memory cell in said selected row of memory cells; inputmeans for writing data to said selected memory cell in said array;output means for presenting the data contained in said selected memorycell in said array; a register comprised of a plurality of memory cells;means, responsive to a transfer signal, for transferring the contents ofmemory cells in said selected row to said memory cells in said register;serial output means for presenting the contents of a selected memorycell in said register; and serial clock means, responsive to a serialclock signal, for shifting to said serial output means the contents ofanother memory cell in said register so that, responsive to a series ofsaid serial clock signals, the contents of a series of memory cells ispresented by said serial output means; wherein said column addressmeans, responsive to said transfcr signal, selects the memory cell insaid register to be connected to said serial output means, said selectedmemory cell in said register corresponding to said column addresssignal.
 13. The memory device of claim 12, further comprising:latchmeans, responsive to said column address means, for storing the locationof said selected memory cell in said register to be connected to saidserial output means until another memory cell in said register isselected to be connected to said serial output means.
 14. The memorydevice of claim 13, wherein said register contains a number of memorycells equal to the number of columns in said array;wherein each memorycell in said register has an output; and wherein said serial outputmeans is responsive to said latch means, so that said serial outputmeans is connected to the output of said memory cell in said registercorresponding to the location stored in said latch means.
 15. The memorydevice of claim 14, wherein said column address means has an output foreach memory cell in said register;wherein said column address meansprovides a decode signal at the output associated with the selectedmemory cell in said register to be connected to said serial outputmeans; and wherein said latch means comprises:a latch input means, foreach memory cell in said register, connected to the output of saidcolumn address means corresponding to said memory cell in said register;a pass gate means, for each memory cell in said register, said pass gatemeans having an input connected to a control node, for connecting theoutput of the memory cell associated therewith to said serial outputmeans; a first inverter, for each memory cell in said register, saidfirst inverter having an input connected to said control node and anoutput; a first gate means for selectively connecting said latch inputmeans to said control node, responsive to a latch clock signal; a secondinverter associated with each said first inverter, each said secondinverter having an input connected to the output of its associated firstinverter, and having an output connected to the input of its associatedfirst inverter; and means for generating a latch clock signal for apredetermined time responsive to said column address means providing adecode signal, so that said latch input means for each memory cell insaid register is connected to said control node for said predeterminedtime by said first gate means; wherein said pass gate means associatedwith said selected memory cell connects the output of said memory cellto said serial output means, responsive to said control node receivingsaid decode signal; and wherein said first inverter and said secondinverter latch said decode signal at said control node so that, aftersaid predetermined time that said latch clock is generated, said outputof said selected memory cell in said register remains connected to saidserial output means.
 16. The memory device of claim 15, furthercomprising:a second gate means, for each memory cell in said register,said second gate means having an input connected to said control node,for connecting said output of said memory cell in said register to saidpass gate means, responsive to said control node receiving said decodesignal.
 17. A memory device, comprising:an array of addressable memorycells, arranged in rows and columns; row strobe means for receiving arow strobe signal; column strobe means for receiving a column strobesignal; row address means, responsive to a row address signal andcoupled to said row strobe means, for selecting the row of memory cellin said array corresponding to said row address signal, responsive tosaid row strobe signal; column address means, responsive to a columnaddress signal and coupled to said column strobe means, for selectingthe memory cell in said selected row of memory cells corresponding tosaid column address signal, responsive to said column strobe signal;input means for writing data to said selected memory cell; output meansfor presenting the data contained in said selected memory cell; aregister comprised of a plurality of memory cells; means, responsive toa transfer signal, for transferring the contents of memory cells in saidselected row to said memory cells in said register; serial output meansfor presenting the contents of a selected memory cell in said register;and serial clock means, responsive to a serial clock signal, forshifting to said serial output means the contents of another memory cellin said register so that, responsive to a series of said serial clocksignals, the contents of a series of memory cells is presented by saidserial output means; wherein said column address means, responsive to atransfer enable signal, selects the memory cell in said register to beconnected to said serial output means, said selected memory cell in saidregister corresponding to said column address signal.
 18. The memorydevice of claim 17, further comprising:latch means, responsive to saidcolumn address means, for storing the location of said selected memorycell in said register to be connected to said serial output means, untilsuch time as said column address means, responsive to said transferenable signal, selects another memory cell in said register to beconnected to said serial output means.
 19. The memory device of claim18, wherein said register contains a number of memory cells equal to thenumber of columns in said array;wherein each memory cell in saidregister has an output; and wherein said serial output means isresponsive to said latch means so that said serial output means isconnected to the output of said memory cell in said registercorresponding to the location stored in said latch means.
 20. The memorydevice of claim 19, further comprising:a transfer control means forreceiving a transfer control signal having a first logic state and asecond logic state; and means, coupled to said row strobe means and tosaid transfer control means, for generating a transfer enable signalresponsive to said transfer control signal being at its first logicstate at the time said row strobe signal occurs.
 21. The memory deviceof claim 20, further comprising:means, coupled to said transfer controlmeans, for generating a transfer signal responsive to said transfercontrol signal going from its first logic state to its second logicstate.
 22. The memory device of claim 19, wherein said column addressmeans is also responsive to said column strobe means so that said columnaddress means selects a memory cell in said register to be connected tosaid serial output means responsive to said column address, said tranferenable signal and said column strobe means, thereby allowing saidtransferring means to transfer the contents of another row of said arrayto said register, without said column address means selecting anothermemory cell in said register to be connected to said serial output meansin the absence of said column strobe signal.